MODELLING OF RAPID STAGE DECAY OF SIGNAL OF OPTICAL SENSOR BASED ON HETEROSTRUCTURE CdS-Cu2 S

Автор(и)

DOI:

https://doi.org/10.18524/0235-2435.2014.23.158783

Ключові слова:

nonideal heterojunction, image sensor, deep traps, tunneling

Анотація

The work is devoted to modeling and calculation of the spatial distribution of the concentration of charge localized in the space charge region (SCR) heterojunction, this distribution changes with time at different initial filling of deep traps centers nonequilibrium holes. Within the framework described model the theoretical calculation of two characteristic stages of relaxation current, compliance with the calculated and experimentally obtained dependencies was demonstrated.

Посилання

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Опубліковано

2014-12-06

Номер

№ 23 (2014)

Розділ

Статті

Ліцензія

Авторське право (c) 2020 Photoelectronics

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